DocumentCode :
1615293
Title :
Device-design metrics to improve manufacturability
Author :
Peterson, Kirk ; Logan, Ron ; Yu, Xiaojun ; Dezfulian, Kevin ; Bazan, Greg ; Winslow, Jon ; Zamdmer, Noah ; Dubuque, Lenny ; Walsh, Brian ; Norfleet, Andrew ; Clougherty, Fran ; Bayat, Ben ; Mocuta, Anda ; Rim, Ken
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT, USA
fYear :
2010
Firstpage :
179
Lastpage :
183
Abstract :
Over the past three technology generations we have made systematic observations on device-design strategies leading to optimal circuit-limited yield. These strategies now impose additional considerations that need to be directly coupled into the technology-development paradigm. At the core of the present discussion is the balance between traditional FET (Field Effect Transistor) and small-circuit optimization and the concurrent impact seen at product level. Certain device-design tradeoffs need to be understood in order to maximize performance for a diverse range of products.
Keywords :
circuit optimisation; field effect transistors; semiconductor device manufacture; device design metrics; field effect transistor; semiconductor device design; small-circuit optimization; technology-development paradigm; Capacitance; Delay; FETs; Logic gates; Performance evaluation; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location :
San Francisco, CA
ISSN :
1078-8743
Print_ISBN :
978-1-4244-6517-0
Type :
conf
DOI :
10.1109/ASMC.2010.5551444
Filename :
5551444
Link To Document :
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