SPICE-Inspired Fast Gate-Level Computation of NBTI-induced Delays in Nanoscale Logic

Accurate prediction of circuit aging is essential to reliable design, in particular for critical applications. Based on intensive HSPICE electrical simulations, we developed a predictive model to compute NBTI-induced path delay degradation at gate-level. The method is based on a static timing analysis that computes path delay under NBTI-induced VTHp (pMOS transistor threshold voltage) degradation. The proposed approach is demonstrated on an industrial ALU circuit design. The obtained results demonstrate a good fitting between the developed model and HSPICE simulations with several orders of magnitude gain in simulation speed.