Title :
Developing GaN HEMTs for high efficiency
Author :
Takagi, Kazutaka ; Matsushita, Keiichi ; Masuda, Kazutoshi ; Nakanishi, Shinichiro ; Soejima, Tomohide ; Sakurai, Hiroyuki ; Onodera, Ken ; Shim, Jeoungchill ; Kawasaki, Hisao ; Takada, Yoshiharu ; Hirose, Mayumi ; Tsuda, Kunio
Author_Institution :
Microwave Solid-state Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
An efficiency of AlGaN/GaN High Electron Mobility Transistors (HEMTs) were improved for Ku band. The AlGaN/GaN HEMTs were developed with an achievable fmax of 138 GHz, which depended on the thickness of the AlGaN barrier layer and the gate length. A 6.4 mm gate periphery device was thereafter designed with matching circuits on an alumina substrate on a metal carrier plate. The output power achieved 20 W at 26 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; wide band gap semiconductors; Al2O3; AlGaN-GaN; HEMT; Ku band; alumina substrate; frequency 26 GHz; gate length; gate periphery device; high electron mobility transistors; metal carrier plate; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; MODFETs; Power generation; AlGaN; GaN; HEMT; Ka-band;
Conference_Titel :
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International
Conference_Location :
Uji, Kyoto
Print_ISBN :
978-1-61284-214-1
DOI :
10.1109/IMWS.2011.5877129
