Analysing the influence of emission layer thickness and interface defect states on bifacial HIT solar cell

The influence of emitter layer thickness and interface defect states on the photovoltaic performance of bifacial HIT solar cell was simulated by the program of AMPS-1D developed by the Pennsylvania State University. The simulation results indicate that the conversion efficiency of the solar cell reduces with increasing the emission layer thickness. However, the influence of the emission layer thickness on each specific photovoltaic characteristic is different between the high and low doping concentration of emission layer. The results also show that the interface defect states have obvious effect on the open circuit voltage of bifacial HIT solar cell especially on the p type substrate.