DocumentCode
1615562
Title
A BiCMOS implementation of MOSIS fabricated circuit elements
Author
Menezes, Conrad O. ; Smith, Edwyn D.
Author_Institution
Dept. of Electr. Eng., Toledo Univ., OH, USA
fYear
1992
Firstpage
1512
Abstract
Attempts to address the issue of layout and characterization of bipolar transistors and base diffused resistors fabricated in a MOSIS 2-μm, n-well, low-noise CMOS analog process. The results obtained from a test chip were used to implement a BiCMOS driver with the capability of driving a large capacitance at high speed. The effectiveness of this design is proven by a circuit simulator as well as evaluations on prototypes fabricated
Keywords
BiCMOS integrated circuits; digital simulation; driver circuits; linear integrated circuits; 2 micron; BiCMOS implementation; MOSIS fabricated circuit elements; base diffused resistors; bipolar transistors; circuit simulator; layout; low-noise CMOS analog process; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit noise; Driver circuits; Geometry; Manufacturing processes; Resistors; Semiconductor device noise; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location
Washington, DC
Print_ISBN
0-7803-0510-8
Type
conf
DOI
10.1109/MWSCAS.1992.271074
Filename
271074
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