DocumentCode
1615592
Title
Aluminum nano interconnects
Author
Steinlesberger, G. ; Schindler, G. ; Engelhardt, M. ; Steinhögl, W. ; Traving, M.
Author_Institution
Infineon Technol., Munich, Germany
fYear
2004
Firstpage
51
Lastpage
53
Abstract
The physical and technological limitations for aluminium interconnect technology in the deep sub-100 nm regime are investigated. Using a wet chemical process for hard mask trimming the fabrication of nano Al interconnects has been demonstrated. Based on first electrical measurements the electrical size effect of Al interconnects with critical dimensions far below 100 nm as well as the impact of side wall roughness are discussed.
Keywords
aluminium; etching; integrated circuit interconnections; 100 nm; Al; critical dimensions; electrical measurements; electrical size effect; hard mask trimming; nano Al interconnects; physical limitations; side wall roughness; technological limitations; wet chemical process; Aluminum; Artificial intelligence; Chemical technology; Conductivity; Copper; Electrons; Etching; Grain size; Metallization; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN
0-7803-8308-7
Type
conf
DOI
10.1109/IITC.2004.1345681
Filename
1345681
Link To Document