PECVD low-k SiOC (k=2.8) as a cap layer for 200nm pitch Cu interconnect using porous low-k dielectrics (k=2.3)

Author

Lee, S.G. ; Yoshie, T. ; Sudo, Y. ; Soda, E. ; Yoneda, K. ; Yoon, B.U. ; Kabayashi, H. ; Kageyama, S. ; Misawa, K. ; Kondo, S. ; Nasuno, T. ; Matsubara, Y. ; Ohashi, N. ; Kobayash, N.

Author_Institution

Semicond. Leading Edge Technol., Inc., Ibaraki, Japan

fYear

2004

Firstpage

63

Lastpage

65

Abstract

This work proposes a use of PECVD low-k carbon-doped SiO2 (SiOC) as a cap layer for 200nm pitch Cu interconnects using high-modulus porous MSQ (k=2.3) to reduce the low-k void formation and the effective dielectric constant (keff). The mechanism of void suppression is due to the high permeability of SiOC film for fluorine (F), which is incorporated I p-MSQ during damascene etching. The elimination of voids by application of SiOC cap layer is confirmed by FIB analysis as well as the electrical characteristics. The keff value of 200nm pitch Cu/p-MSQ interconnects is reduced using SiOC cap layer, which is in good agreement with the calculation. Thus, this process is promising for the reliable porous ultra low-k for the 65nm node and beyond.

Keywords

copper; dielectric materials; integrated circuit interconnections; plasma CVD; silicon compounds; 200 nm; Cu; Cu interconnect; FIB analysis; PECVD; SiOC; SiOC cap layer; damascene etching; effective dielectric constant; electrical characteristics; high permeability film; high-modulus porous MSQ; low-k SiOC; low-k void formation; porous low-k dielectrics; void suppression; Ash; Chemical analysis; Copper; Dielectric constant; Dry etching; Electric variables; Lead compounds; Permeability; Silicon carbide; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345685

Filename

1345685