Title :
Epitaxial and layout optimization of SiC microwave power varactors
Author :
Andersson, Christer M. ; Magnusson, Björn ; Henelius, Niklas ; Rorsman, Niklas
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
SiC Schottky diode varactors have been designed for use in tunable microwave power circuits. Epitaxial growth results show excellent material uniformity with low access layer sheet resistances. Two types of device layouts have been evaluated. Island type layouts reduce the parasitic series resistance by 50-60% compared to typical finger layouts. The Q-factors of downscaled island devices are approaching the intrinsic material performance, but are limited by an increasing parasitic parallel capacitance.
Keywords :
Q-factor; Schottky diodes; epitaxial growth; microwave devices; silicon compounds; varactors; wide band gap semiconductors; Q-factors; Schottky diode varactors; SiC; epitaxial growth; finger layouts; layout optimization; low access layer sheet resistances; microwave power varactors; tunable microwave power circuits; Layout; Microwave theory and techniques; Ohmic contacts; Resistance; Silicon carbide; Tuning; Varactors;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
