DocumentCode
1615823
Title
Experiments and models for circuit-level assessment of the reliability of Cu metallization
Author
Thompson, C.V. ; Gan, C.L. ; Alam, S.M. ; Troxel, D.E.
Author_Institution
Material Sci. & Eng., MIT, Cambridge, MA, USA
fYear
2004
Firstpage
69
Lastpage
71
Abstract
Accurate circuit-level reliability analyses can be based in experimental results for simple interconnect segments if interconnect trees, linked interconnect segments within one level of metallization, are used as fundamental reliability units. The reliability behaviour of both segments and trees is different for Al and Cu. A revised method is proposed for tree-based circuit-level reliability analyses for Cu. The types of additional experimental data that would allow assessments with improves accuracy are outlined.
Keywords
integrated circuit modelling; integrated circuit reliability; metallisation; Cu; Cu metallization reliability; circuit-level assessment; fundamental reliability units; interconnect trees; linked interconnect segments; reliability behaviour; tree-based circuit-level reliability analyses; Circuit analysis; Current density; Electromigration; Gallium nitride; Integrated circuit interconnections; Materials reliability; Materials science and technology; Metallization; Reliability engineering; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN
0-7803-8308-7
Type
conf
DOI
10.1109/IITC.2004.1345689
Filename
1345689
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