Title :
High performance Cu interconnects capped with full-coverage ALD TaNx layer for Cu/low-k (k∼2.5) metallization
Author :
Lee, Hsien-Ming ; Lin, J.C. ; Peng, C.H. ; Pan, S.C. ; Huang, C.L. ; Su, L.L. ; Hsieh, C.H. ; Shue, Winston S. ; Liang, M.S.
Author_Institution :
Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
Abstract :
Performance of Cu dual damascene interconnects with a full coverage ALD TaNx cap layer coating on the top surface of Cu line has been investigated. With deposition process that generates different ALD TaNx film properties on Cu and low-k dielectrics, 100% yield of line-to-line leakage can be achieved. ALD TaNx cap layer can improve electromigration lifetime by more than 3 times due to improvement of the interface between Cu and cap layer which actually suppress the Cu surface migration without degradation of stress migration performance. This work demonstrates that ALD TaNx cap layer can be successfully integrated with Cu/low-k (k∼2.5) metallization with potential5% reduction in RC delay as compared to conventional cap layer.
Keywords :
atomic layer deposition; copper; electromigration; integrated circuit metallisation; tantalum compounds; ALD TaN film properties; Cu; Cu metallization; RC delay reduction; TaN; cap layer coating; deposition process; dual damascene interconnects; electromigration lifetime; full-coverage ALD TaN layer; high performance Cu interconnects; interface improvement; line-to-line leakage; low-k metallization; stress migration performance; surface migration; Adhesives; Atomic layer deposition; Coatings; Delay; Dielectric substrates; Electromigration; Leakage current; Metallization; Testing; Transmission electron microscopy;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345690
