DocumentCode
1615885
Title
Cost of ownership/yield enhancement of high volume immersion lithography utilizing topcoat-less resists
Author
Khorram, Hamid R. ; Nakano, Katsushi ; Sagawa, Natsuko ; Ishii, Y. ; Fujiwara, Tomoharu ; Iriuchijima, Yasuhiro
Author_Institution
Nikon Precision Inc., Belmont, CA, USA
fYear
2010
Firstpage
277
Lastpage
283
Abstract
From the initial stages of immersion lithography development, through mainstream manufacturing today, topcoat processes have been utilized. However, the complexity and extra cost associated with the topcoat layer has motivated the industry as a whole to transition to topcoat-less (TC-less) resist processes. By switching to TC-less resists, track suppliers are able to achieve higher throughput using smaller and less costly equipment. In addition, scanner suppliers can increase the scanning speed of their litho scanners with minimized risk of defects, while end-users will eliminate a process step and gain increased output at a lower cost. These factors become increasingly critical as a result of the heightened processing complexities associated with the introduction of double patterning (DP) lithography. Although the motivations for topcoat-less processing are significant, there are numerous technical challenges. One is the potential for added defects, and the correlation between dynamic receding contact angle (D-RCA) and defectivity performance will be discussed. In addition, due to continuous pattern size shrinkage, smaller defects that may not have been problematic or even existed in the past, now can contribute to yield loss. To better understand the defectivity-generation mechanisms, defect review before and after development is necessary. Detailed results of these experiments will also be discussed in this paper. In addition to having defectivity benefits, a topcoat-less process must also satisfy the other critical performance criteria. Results for overlay, autofocus, and imaging will be discussed in this paper. To justify transition to a new technology, there also should be demonstration of associated cost reduction or productivity improvements, and a comparison of topcoat and topcoat-less processes will again be shown.
Keywords
contact angle; immersion lithography; resists; cost of ownership; defectivity performance; double patterning lithography; dynamic receding contact angle; high volume immersion lithography; topcoat-less resists; yield enhancement; Imaging; Lenses; Lithography; Resists; Semiconductor device modeling; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location
San Francisco, CA
ISSN
1078-8743
Print_ISBN
978-1-4244-6517-0
Type
conf
DOI
10.1109/ASMC.2010.5551464
Filename
5551464
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