Analysis by measurements and circuit simulations of the PT- and NPT-IGBT under different short-circuit conditions

Author

Cotorogea, M. ; Claudio, A. ; Aguayo, J.

Author_Institution

Centro Nacional de Invest. y Desarrollo Tecnologico, Morelos, Mexico

Volume

2

fYear

2000

fDate

6/22/1905 12:00:00 AM

Firstpage

1115

Abstract

An analysis of the behavior of 600 V PT and NPT IGBTs under following cases of short circuit is reported: (1) the short circuit occurs before the device actively turns on; (2) the short circuit occurs when the device is conducting; and (3) as case (1), but operating at low intermediate voltage and with high stray inductance. The analysis is performed using both experimental results and SPICE-simulations

Keywords

SPICE; circuit simulation; insulated gate bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor device testing; short-circuit currents; 600 V; NPT-IGBT; PT-IGBT; SPICE simulations; circuit simulations; experimental results; intermediate voltage operation; measurements; nonpunchthrough IGBTs; punchthrough IGBTs; short circuits; short-circuit conditions; stray inductance; Analytical models; Circuit simulation; Circuit testing; Inductance; Insulated gate bipolar transistors; Low voltage; Performance analysis; Steady-state; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE

Conference_Location

New Orleans, LA

Print_ISBN

0-7803-5864-3

Type

conf

DOI

10.1109/APEC.2000.822827

Filename

822827