Title :
Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect
Author :
Tsui, Ting Y. ; Matz, Phil ; Willecke, Ralf ; Zielinski, Eden ; Kim, Tae ; Haase, Gaddi ; McPherson, Joe ; Singh, Abha ; McKerrow, Andrew J.
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Thin films of silicon nitride (SiN) or silicon carbonitride (SiCN) were deposited as liners at metal-1 in a dual level metal Cu/organosilicate glass interconnect. Breakdown field and time dependent dielectric breakdown lifetime testing of comb/serpent test structures with SiN or SiCN liners showed improvements in performance, relative to a baseline no liner split. Two dimensional electric field simulations demonstrated that the dielectric liner significantly reduced the electric field at the Cu/OSG/etch stop interface.
Keywords :
copper; dielectric thin films; integrated circuit interconnections; semiconductor device breakdown; silicon compounds; 2D electric field simulations; Cu; Cu-OSG-etch stop interface; Cu-low-k interconnect; Cu-organosilicate glass interconnect; SiCN; SiN; breakdown field; comb test structure; dielectric liners; dual level metal interconnect; serpent test structures; silicon carbonitride; silicon nitride; thin films; time dependent dielectric breakdown lifetime; Argon; Atherosclerosis; Breakdown voltage; Copper; Dielectric breakdown; Dielectric thin films; Glass; Life testing; Silicon compounds; Sputter etching;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345692
