Comparison of the state-of-the-art high power IGBTs, GCTs and ETOs

Author

Motto, Kevin ; Li, Yuxin ; Huang, Alex Q.

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

2

fYear

2000

fDate

6/22/1905 12:00:00 AM

Firstpage

1129

Abstract

In this paper, a comparison of three semiconductor devices suitable for high power applications is presented. All devices feature high switching speed and snubberless turn-off capability. The devices compared include one high voltage insulated gate bipolar transistor (HVIGBT) and two types of hard-driven GTO thyristor-the gate commutated turn-off (GCT) thyristor and the emitter turn-off (ETO) Thyristor. The conduction and switching characteristics are compared, and an assessment is presented of the impact on high-power converter circuits for these devices. Test results are shown

Keywords

insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; thyristors; conduction characteristics; emitter turn-off thyristor; gate commutated turn-off thyristor; hard-driven GTO thyristors; high power applications; high-power converter circuits; power IGBTs; semiconductor devices; snubberless turn-off capability; state-of-the-art; switching characteristics; switching speed; Anodes; Current density; Equivalent circuits; Insulated gate bipolar transistors; Low voltage; Power semiconductor switches; Semiconductor devices; Snubbers; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE

Conference_Location

New Orleans, LA

Print_ISBN

0-7803-5864-3

Type

conf

DOI

10.1109/APEC.2000.822829

Filename

822829