Title :
Resonant gate commutated thyristor (RGCT)-a new snubberless turn-off GTO
Author :
Li, Yuxin ; Huang, Alex Q. ; Motto, Kevin
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fDate :
6/22/1905 12:00:00 AM
Abstract :
A new family of snubberless turn-off GTO, the resonant gate commutated thyristor (RGCT) is proposed and investigated. By using a transient high commutation voltage, the RGCT can achieve unity turn-off gain and snubberless turn-off capability-even with a relatively high gate loop stray inductance. Therefore, conventional GTOs with flexible gate lead can be used to achieve state-of-the-art performance similar to that of the integrated gate commutated turn-off thyristor (IGCT). Detailed current commutation analysis and experimental results are presented
Keywords :
commutation; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; thyristors; current commutation analysis; gate loop stray inductance; resonant gate commutated thyristor; snubberless turn-off GTO; snubberless turn-off capability; state-of-the-art performance; transient high commutation voltage; unity turn-off gain; Diodes; Inductance; MOSFETs; Power electronics; Resonance; Snubbers; Switches; Threshold voltage; Thyristors; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-5864-3
DOI :
10.1109/APEC.2000.822830
