Title :
Quantitative control of plasma-surface interactions for highly reliable interconnects
Author :
Yatsuda, Koichi ; Tatsumi, Taizo ; Kawahara, Kei ; Enomoto, Yoshihide ; Hasegawa, Toshiaki ; Hanada, Kaoru ; Saito, Takahiro ; Morita, Yusuke ; Shinohara, Kenji ; Yamane, Tetsuya
Author_Institution :
Sony Comput. Entertainment Inc., Nagasaki, Japan
Abstract :
Plasma technologies for highly reliable Cu/low-k interconnects were developed. Although good dual damascene profiles were fabricated, insufficiently optimized plasma for etching (and/or ashing) degraded Cu and SiOCH surface, and corrupted the interface between Cu and barrier metal (BM) after all. Therefore, we clarified the effect of degradation in the interconnect reliabilities, and controlled the densities of reactive species (CFx and O) in the plasma to optimize the reactions between plasma and material surfaces. Consequently, we achieved high yield and high reliability for 90-nm-node Cu/low-k interconnects in over 40 lots.
Keywords :
integrated circuit interconnections; optimisation; plasma-wall interactions; reliability; silicon compounds; 90 nm; Cu; Cu-low-k interconnects; SiCOH; ashing; barrier metal; density control; dual damascene profile; etching; highly reliable interconnects; interconnect reliability; interface corruption; plasma technology; plasma-surface interaction; plasma-surface reaction optimization; quantitative control; surface degradation; Copper; Degradation; Etching; Mass spectroscopy; Plasma applications; Plasma density; Plasma measurements; Silicon carbide; Surface treatment; Testing;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345698
