Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform

Author

Pozder, S. ; Lu, J.-Q. ; Kwon, Y. ; Zollner, S. ; Yu, J. ; McMahon, J.J. ; Cale, T.S. ; Yu, K. ; Gutma, R.J.

fYear

2004

Firstpage

102

Lastpage

104

Abstract

A previously proposed wafer-level 3D IC technology platform has been extensively evaluated for compatibility with conventional IC packaging. Results demonstrate that the dielectric glue bonding using benzocyclobutene (BCB) is compatible with conventional wafer sawing techniques, and that the bond adhesion strength is unaffected by die-level autoclave and thermal shock testing. High-resolution X-ray diffraction (HRXRD) results show that the stress levels in 70 nm or 140 nm thick silicon SOI layers had no appreciable change after BCB bonding and wafer-thinning.

Keywords

X-ray diffraction; elemental semiconductors; integrated circuit bonding; integrated circuit interconnections; integrated circuit packaging; nanostructured materials; polymers; silicon-on-insulator; 140 nm; 3D interconnect technology platform; 70 nm; BCB bonding; IC packaging; Si; back-end compatibility; benzocyclobutene; bond adhesion strength; die-level autoclave; dielectric glue bonding; high-resolution X-ray diffraction; silicon SOI layers; stress levels; thermal shock testing; wafer sawing; wafer-thinning; Adhesives; Dielectrics; Electric shock; Integrated circuit packaging; Sawing; Testing; Thermal stresses; Three-dimensional integrated circuits; Wafer bonding; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345704

Filename

1345704