DocumentCode
1616263
Title
Adaptive Virtual Metrology applied to a CVD process
Author
Olson, K. ; Moyne, J.
Author_Institution
Micron Technol., Boise, ID, USA
fYear
2010
Firstpage
353
Lastpage
358
Abstract
Micron Technology and Applied Materials engaged in a project to determine if Virtual Metrology (VM) is viable in a semiconductor manufacturing environment, focusing on six chambers of a CVD process with a target metrology parameter of thickness. An adaptive modeling process was utilized that related process fault detection data to metrology data. Results indicate that (1), VM models can be developed and used to improve productivity and reduce cost of the CVD process by providing data to support more intelligent strategies and possibly by supporting a move from lot level to wafer level run-to-run control, and (2) the adaptive component of the models makes the models robust to drift and shift in process characteristics. Model robustness could be improved by utilizing multiple adaptive techniques depending on the process dynamics.
Keywords
chemical vapour deposition; fault diagnosis; semiconductor device manufacture; virtual manufacturing; CVD process; adaptive modeling process; adaptive virtual metrology; applied materials; fault detection data; intelligent strategy; microntechnology; multiple adaptive techniques; semiconductor manufacturing environment; wafer level run-to-run control; Adaptation model; Best practices; Data models; Metrology; Predictive models; Semiconductor device modeling; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI
Conference_Location
San Francisco, CA
ISSN
1078-8743
Print_ISBN
978-1-4244-6517-0
Type
conf
DOI
10.1109/ASMC.2010.5551478
Filename
5551478
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