DocumentCode
1616333
Title
Towards terahertz operation of CMOS
Author
Sankaran, Swaminathan ; Mao, Chuying ; Seok, Eunyoung ; Shim, Dongha ; Cao, Changhua ; Han, Ruonan ; Arenas, Daniel J. ; Tanner, David B. ; Hill, Stephen ; Hung, Chih-Ming ; O, Kenneth K.
Author_Institution
Univ. of Florida, Gainesville, FL
fYear
2009
Firstpage
202
Abstract
This paper reports a new polysilicon gate separated Schottky barrier diode structure (PGS SBD) which enables operation of receivers at frequencies higher than that limited by the transistors; examples of the building blocks with on-chip antennas operating at 100 to 400 GHz, which suggest the use of CMOS in THz applications; and a potential path to realize 1 THz operation in CMOS.
Keywords
CMOS integrated circuits; Schottky diodes; submillimetre wave antennas; terahertz wave devices; CMOS; PGS SBD; frequency 1 THz; frequency 100 GHz to 400 GHz; on-chip antenna; polysilicon gate separated Schottky barrier diode; terahertz operation; CMOS technology; Circuit simulation; Detectors; Dielectrics; Frequency conversion; Matched filters; Oscillators; Patch antennas; Phase locked loops; Schottky diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-3458-9
Type
conf
DOI
10.1109/ISSCC.2009.4977378
Filename
4977378
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