Title :
Fluctuation in drain induced barrier lowering (DIBL) for FinFETs caused by granular work function variation of metal gates
Author :
Matsukawa, T. ; Fukuda, Kenji ; Liu, Y.X. ; Endo, Kazuhiro ; Tsukada, J. ; Ishikawa, Yozo ; Yamauchi, Hiroyuki ; O´uchi, S. ; Migita, S. ; Mizubayashi, W. ; Morita, Yusuke ; Ota, Hiroyuki ; Masahara, M.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
Fluctuation in drain induced barrier lowering (DIBL) has been investigated in detail for FinFETs with regard to work function variation (WFV) in the metal gates (MGs). The FinFETs with a polycrystalline TiN MG exhibit significantly larger fluctuation in DIBL than that for an amorphous TaSiN MG because of the WFV. The granular WFV of TiN was modeled using 3D TCAD simulation. By reproducing the DIBL fluctuation caused by the WFV, mechanism of how the WFV causes the DIBL fluctuation is discussed.
Keywords :
MOSFET; titanium compounds; work function; 3D TCAD simulation; DIBL fluctuation; FinFETs; TiN; WFV; amorphous TaSiN MG; drain induced barrier lowering fluctuation; granular work function variation; metal gates; polycrystalline MG; Analytical models; Electric potential; Films; FinFETs; Fluctuations; Logic gates; Tin;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839648
