Title :
Charging experiments on SiO2 samples under electron irradiation
Author :
Gallet, Renaud ; Gosse, Jean-Pierre ; Arnal, Yves
Author_Institution :
LEMD, CNRS, Grenoble, France
fDate :
6/23/1905 12:00:00 AM
Abstract :
The charging of SiO2/glass samples under pulsed electron irradiation have been experimentally studied. More specifically, results about the secondary electron emission yield of the uncharged surface have been obtained and successfully compared to a semiempirical model. Moreover, we have pointed out a strong deviation of the evolution of the secondary emission yield (during a series of pulsed irradiation) compared to the theoretical expected one; these contradictory behaviors are explained by the influence of the trapped charges on the secondary electron emission from the charged sample surface
Keywords :
electron beam effects; insulating thin films; secondary electron emission; silicon compounds; surface potential; SiO2; SiO2 samples; charging experiments; electron irradiation; secondary electron emission yield; semiempirical model; uncharged surface; Chromium; Current measurement; Electron beams; Electron emission; Electrostatic measurements; Flat panel displays; Probes; Silicon compounds; Surface charging; Time measurement;
Conference_Titel :
Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
Conference_Location :
Eindhoven
Print_ISBN :
0-7803-6352-3
DOI :
10.1109/ICSD.2001.955613
