• DocumentCode
    161648
  • Title

    EUV Lithography

  • Author

    Wurm, Stefan

  • Author_Institution
    SEMATECH, Albany, NY, USA
  • fYear
    2014
  • fDate
    28-30 April 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    EUVL holds the promise of returning to a high k1 lithography thereby reducing design and process complexity. First printed images from the EUV HVM tool generation that is being deployed in the field demonstrate the expected imaging quality; however, the industry is waiting to see if reliability data and productivity improvements of the first production tools at customer sites will meet expectations. While EUVL is still facing infrastructure and productivity challenges-mask blank defectivity and source power the most prominent among those-EUVL it is seen as the only technology that could meet the semiconductor industry´s need to significantly reduce lithography cost from the double and multiple patterning approaches that are currently required to achieve the desired feature resolution.
  • Keywords
    masks; reliability; ultraviolet lithography; EUV HVM tool generation; EUV Lithography; high k1 lithography; imaging quality; mask blank defectivity; process complexity; production tools; reliability data; semiconductor industry; source power; Glass; Industries; Lithography; Resists; Ultraviolet sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2014.6839652
  • Filename
    6839652