DocumentCode
161648
Title
EUV Lithography
Author
Wurm, Stefan
Author_Institution
SEMATECH, Albany, NY, USA
fYear
2014
fDate
28-30 April 2014
Firstpage
1
Lastpage
2
Abstract
EUVL holds the promise of returning to a high k1 lithography thereby reducing design and process complexity. First printed images from the EUV HVM tool generation that is being deployed in the field demonstrate the expected imaging quality; however, the industry is waiting to see if reliability data and productivity improvements of the first production tools at customer sites will meet expectations. While EUVL is still facing infrastructure and productivity challenges-mask blank defectivity and source power the most prominent among those-EUVL it is seen as the only technology that could meet the semiconductor industry´s need to significantly reduce lithography cost from the double and multiple patterning approaches that are currently required to achieve the desired feature resolution.
Keywords
masks; reliability; ultraviolet lithography; EUV HVM tool generation; EUV Lithography; high k1 lithography; imaging quality; mask blank defectivity; process complexity; production tools; reliability data; semiconductor industry; source power; Glass; Industries; Lithography; Resists; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/VLSI-TSA.2014.6839652
Filename
6839652
Link To Document