Title :
Measuring the elastic modulus and ultimate strength of low-k dielectric materials by means of the bulge test
Author :
Xiang, Yong ; Tsui, Ting Y. ; Vlassak, Joost J. ; McKerrow, Andrew J.
Author_Institution :
Div. of Eng. & Appl. Sci., Harvard Univ., Cambridge, MA, USA
Abstract :
The mechanical properties of organosilicate glass (OSG) thin films were measured for the first time using bulge testing of OSG / silicon nitride (SiNx) freestanding membranes. Evaluation of two different OSG films revealed significant differences in Young´s modulus and residual stress between the two dielectric films. Young´s modulus of both types of OSGs was independently measured using nanoindentation and found to be at least 8.5-17% greater than that measured using the bulge test. It is well known, and demonstrated herein, that modulus data obtained from nanoindentation is influenced by mechanical properties of the substrate. Operating without this constraint, it is believed that data obtained using the bulge test more accurately represents the intrinsic mechanical properties of OSG thin films.
Keywords :
Young´s modulus; dielectric thin films; elastic moduli measurement; indentation; mechanical testing; organic compounds; OSG thin films; SiN; Young´s modulus; bulge testing; dielectric films; elastic modulus measurment; low-k dielectric materials; mechanical properties measurement; nanoindentation; organosilicate glass; residual stress; silicon nitride; strength measurement; Dielectric materials; Dielectric measurements; Dielectric thin films; Glass; Materials testing; Mechanical factors; Mechanical variables measurement; Semiconductor thin films; Silicon; Time measurement;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345717
