X-ray and neutron porosimetry as powerful methodologies for determining structural characteristics of porous low-k thin films

Author

Lee, Hae-Jeong ; Vogt, Bryan D. ; Soles, Christopher L. ; Liu, Da-Wei ; Bauer, Bany J. ; Wu, Wen-li ; Lin, Eric K. ; Kang, Gwi-Gwon ; Ko, Min-Jin

Author_Institution

Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2004

Firstpage

136

Lastpage

138

Abstract

Methylsilsesquioxane based porous low-k dielectric films with varying porogen loading have been characterized using X-ray and neuron porosimetry to determine their pore size distribution, average density, wall density, porosity, density profiles, and porosity profiles. The porosity and the average pore size of the sample with 45% porogen were 52% and 23 Å in radius, respectively. Pore size, was consistent with that from small angle neutron scattering measurements. The wall density was found to be independent of the porogen content and it appeared that the porogen was 100% effective in generating pores.

Keywords

X-ray diffraction; dielectric thin films; polymer films; porosity; porous materials; 23 angstrom; X-ray porosimetry; average density; density profiles; dielectric films; methylsilsesquioxane; neutron porosimetry; neutron scattering measurement; pore generation; pore size distribution; porogen content; porogen loading; porosity profiles; porous low-k thin films; small-angle measurement; structural characteristics; wall density; Chemical technology; Dielectric films; Dielectric measurements; Dielectric thin films; Neutron spin echo; Optical films; Polymer films; Reflectivity; Storage area networks; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345718

Filename

1345718