DocumentCode
161652
Title
Impact of channel doping on the device and NBTI performance in FinFETs for low power applications
Author
Sachid, Angada B. ; Chenming Hu
Author_Institution
Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA
fYear
2014
fDate
28-30 April 2014
Firstpage
1
Lastpage
2
Abstract
We present device-level characterization of digital, analog and NBTI parameters for p-FinFETs with different channel doping. We show that using channel doping we can trade-off device and NBTI performance. In p-FinFETs, Arsenic doped channel has better digital and analog performance and Boron doped channel has superior NBTI performance. Forward body bias reduces NBTI degradation in p-FinFETs.
Keywords
MOSFET; low-power electronics; negative bias temperature instability; semiconductor doping; NBTI performance; analog performance; arsenic doped channel; boron doped channel; channel doping; device-level characterization; digital performance; forward body bias; low power applications; negative- bias temperature instability; p-FinFETs; Boron; Doping; Electric fields; FinFETs; Logic gates; Performance evaluation; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/VLSI-TSA.2014.6839654
Filename
6839654
Link To Document