Title :
Body-bias effect in SOI FinFET for low-power applications: Gate length dependence
Author :
Sachid, Angada B. ; Khandelwal, Sourabh ; Chenming Hu
Author_Institution :
Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA
Abstract :
We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.
Keywords :
MOSFET; low-power electronics; semiconductor device measurement; semiconductor doping; silicon-on-insulator; SOI FinFET; body-bias effect; channel doping; device geometry; gate length dependence; low-power electronics; Couplings; Doping; Electric fields; FinFETs; Logic gates; Substrates; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839655
