DocumentCode
1616537
Title
Studies of ammonia synthesis in a strong ionization discharge at ambient pressure
Author
Bai, Mindong ; Zhang, Zhitao ; Han, Hui ; Wang, Yan ; Bai, Xiyao
Author_Institution
Environ. Eng. Res. Inst., Dalian Maritime Univ., China
Volume
2
fYear
2001
Firstpage
1103
Abstract
The plasma synthesis of ammonia has been studied in nitrogen-hydrogen plasma using a strong ionization discharge at ambient pressure. With the new technology of dielectric barrier, the reduced field reaches 300 Td in the narrow discharge gap, and the electrons gain the average energy of 8 eV. At the same time, N/sub 2/ and H/sub 2/, molecules are ionized and dissociated and a large number of free atoms, ions and radicals are in nonequilibrium plasma after inelastic collisions. The final product was mainly ammonia including a small amount of hydrazine, and the yields of ammonia reaches 12500 ppm (1.25%). In this way, plasma synthesis of ammonia at ambient pressure is realized and a new method is provided for inorganic synthesis, which consumes little energy and simplifies the process.
Keywords
ammonia; discharges (electric); dissociation; free radical reactions; ionisation; plasma chemistry; plasma collision processes; plasma materials processing; 8 eV; N/sub 2/-H/sub 2/; NH/sub 3/; ambient pressure; ammonia; ammonia synthesis; average energy; dielectric barrier; free atoms; free radicals; hydrazine; inelastic collisions; inorganic synthesis; ions; molecules dissociation; molecules ionisation; narrow discharge gap; nitrogen-hydrogen plasma; nonequilibrium plasma; plasma synthesis; reduced field; strong ionization discharge; Atomic measurements; Chemical technology; Dielectrics; Electrons; Ionization; Iron; Nuclear and plasma sciences; Plasma temperature; Radio frequency; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location
Chicago, IL, USA
ISSN
0197-2618
Print_ISBN
0-7803-7114-3
Type
conf
DOI
10.1109/IAS.2001.955616
Filename
955616
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