Electron ballistic current enhancement of Ge1−xSnx FinFETs

Author

Lan, H.-S. ; Liu, C.W.

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

The indirect-direct transition of Ge_1-xSn_x at Sn content 6.5% is simulated by nonlocal empirical pseudopotential method. The non-parabolicity band of Γ valley is considered for confined mass, density of state, and conductivity mass for the electron ballistic current calculation of Ge_1-xSn_x FinFETs. The integration of alloying Sn content and applying external stress enhances the ballistic current due to carriers transferring from indirect L valleys with small injection velocity to direct Γ valley and other indirect L valleys with high injection velocity.

Keywords

MOSFET; germanium alloys; stress analysis; tin alloys; FinFETs; Ge_1-xSn_x; conductivity mass; confined mass; direct Γ valley; electron ballistic current enhancement; external stress; indirect L valleys; indirect-direct transition; injection velocity; nonlocal empirical pseudopotential method; nonparabolicity band; state density; Abstracts; Data mining; Effective mass; FinFETs; Photonic band gap; Stress; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839656

Filename

6839656