Spin-on dielectric stack low-k integration with EB curing technology for 45nm-node and beyond

Author

Nagai, H. ; Maekawa, K. ; Iwashita, M. ; Muramatsu, M. ; Kubota, K. ; Hinata, K. ; Kokubo, T. ; Shiota, A. ; Hattori, M. ; Nagano, H. ; Tokushige, K. ; Kodera, M. ; Mishima, K.

Author_Institution

Tokyo Electron AT Ltd., Japan

fYear

2004

Firstpage

145

Lastpage

147

Abstract

To achieve effective k value less than 3.0, we investigated spin-on dielectric stack damascene integration scheme with electron beam (EM) cure. By using porous-MSQ (k=2.3) as ILD and dense-MSQ (k=2.9) as hard mask (HM), effective k value could be lowered, and by EB curing the full dielectric stack only once, mechanical strength for both ILD and HM were improved and a reduced thermal budget was obtained. In addition, a low damage resist strip process for the low-k materials was evaluated. These elements of BEOL technology have applicability to 45nm technology node and beyond.

Keywords

curing; dielectric properties; dielectric thin films; electron beam applications; masks; mechanical strength; nanotechnology; polymer films; porous materials; 45 nm; 45nm technology node; BEOL technology; EB curing; ILD; dense-MSQ; dielectric stack damascene integration; hard mask; low-k integration; mechanical strength improvement; porous-MSQ; resist strip process; spin-on dielectric stack; thermal budget reduction; Adhesives; Chemistry; Curing; Damascene integration; Dielectric constant; Dielectric materials; Electron beams; Leakage current; Resists; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345721

Filename

1345721