Title :
Self-crystallization and reduced contact resistivity by hot phosphorus ion implant in germanium-tin alloy
Author :
Lanxiang Wang ; Bin Liu ; Xiao Gong ; Pengfei Guo ; Qian Zhou ; Lye-Hing Chua ; Wei Zou ; Hatem, Christopher ; Henry, Todd ; Yee-Chia Yeo
Author_Institution :
Dept. Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
We investigated the effect of phosphorus ion (P+) implant temperature on the material properties of epitaxial GeSn alloy and the electrical characteristics of GeSn n+/p diodes. Hot P+ implant maintains the single crystallinity of GeSn during implant. In addition, samples implanted at elevated temperature followed by a subsequent RTA at 450 °C for 3 minutes achieve a lower contact resistivity compared with those implanted at room temperature, indicating a higher P dopant activation.
Keywords :
contact resistance; crystallisation; germanium alloys; ion implantation; phosphorus; semiconductor diodes; tin alloys; GeSn; P; RTA; dopant activation; epitaxial alloy; germanium-tin alloy; hot phosphorus ion implant; material properties; n+/p diodes; phosphorus ion implant temperature; reduced contact resistivity; self-crystallization; single crystallinity; temperature 293 K to 298 K; temperature 450 degC; time 3 min; Annealing; Conductivity; Implants; Junctions; Resistance; Substrates; Temperature;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839659
