Title :
Air gap technology by selective ozone/TEOS deposition
Author :
Gabric, Z. ; Pamler, W. ; Schindler, G. ; Steinhogl, W. ; Traving, M.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A technology for fabrication of air gaps is presented which is based upon selective ozone/TEOS deposition of oxide. Due to the isotropic growth direction of this process, some disadvantages of the more common approaches by nonconformal CVD processes can be avoided. It is demonstrated that air gap technology has the potential to reduce the capacitance between adjacent metal lines roughly by a factor of 2 compared to full structures without air gaps.
Keywords :
air gaps; capacitance; etching; vapour deposition; O2; O3; adjacent metal lines; air gap fabrication; air gap technology; capacitance; isotropic growth direction; nonconformal CVD; oxide deposition; selective ozone-TEOS deposition; Air gaps; Conducting materials; Delay systems; Fabrication; Inorganic materials; Insulation; Lithography; Parasitic capacitance; Semiconductor materials; Silicon on insulator technology;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345723
