DocumentCode
1616647
Title
Air gap technology by selective ozone/TEOS deposition
Author
Gabric, Z. ; Pamler, W. ; Schindler, G. ; Steinhogl, W. ; Traving, M.
Author_Institution
Infineon Technol., Munich, Germany
fYear
2004
Firstpage
151
Lastpage
153
Abstract
A technology for fabrication of air gaps is presented which is based upon selective ozone/TEOS deposition of oxide. Due to the isotropic growth direction of this process, some disadvantages of the more common approaches by nonconformal CVD processes can be avoided. It is demonstrated that air gap technology has the potential to reduce the capacitance between adjacent metal lines roughly by a factor of 2 compared to full structures without air gaps.
Keywords
air gaps; capacitance; etching; vapour deposition; O2; O3; adjacent metal lines; air gap fabrication; air gap technology; capacitance; isotropic growth direction; nonconformal CVD; oxide deposition; selective ozone-TEOS deposition; Air gaps; Conducting materials; Delay systems; Fabrication; Inorganic materials; Insulation; Lithography; Parasitic capacitance; Semiconductor materials; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN
0-7803-8308-7
Type
conf
DOI
10.1109/IITC.2004.1345723
Filename
1345723
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