Title :
Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing
Author :
Dalton, T.J. ; Fuller, N. ; Tweedie, C. ; Dunn, Donald ; Labelle, C. ; Gates, S. ; Colburn, M. ; Chen, S.T. ; Lai, Tao ; DellaGuardia, R. ; Petrarca, K. ; Dziobkowski, C. ; Kumar, K. ; Siddiqui, S.
Author_Institution :
IBM Res. Div., Semicond. R&D Center, Yorktown Heights, NY, USA
Abstract :
Modification of low-k dielectric materials during photoresist plasma stripping was examined using a variety of analytical techniques. These techniques were initially applied to blanket wafers and were subsequently applied to both specially-designed test structures and product structures on patterned wafers. Results of these experiments are presented and analyzed.
Keywords :
dielectric materials; plasma materials processing; porous materials; silicon compounds; SiCOH; ash-induced modification; blanket wafers; damascene plasma processing; dense SiCOH materials; inter-level-dielectric materials; low-k dielectric materials; photoresist plasma stripping; porous SiCOH materials; Dielectric materials; Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Plasma measurements; Resists; Semiconductor materials; Strips; Testing;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345724
