Ash-induced modification of porous and dense SiCOH inter-level-dielectric (ILD) materials during damascene plasma processing

Author

Dalton, T.J. ; Fuller, N. ; Tweedie, C. ; Dunn, Donald ; Labelle, C. ; Gates, S. ; Colburn, M. ; Chen, S.T. ; Lai, Tao ; DellaGuardia, R. ; Petrarca, K. ; Dziobkowski, C. ; Kumar, K. ; Siddiqui, S.

Author_Institution

IBM Res. Div., Semicond. R&D Center, Yorktown Heights, NY, USA

fYear

2004

Firstpage

154

Lastpage

156

Abstract

Modification of low-k dielectric materials during photoresist plasma stripping was examined using a variety of analytical techniques. These techniques were initially applied to blanket wafers and were subsequently applied to both specially-designed test structures and product structures on patterned wafers. Results of these experiments are presented and analyzed.

Keywords

dielectric materials; plasma materials processing; porous materials; silicon compounds; SiCOH; ash-induced modification; blanket wafers; damascene plasma processing; dense SiCOH materials; inter-level-dielectric materials; low-k dielectric materials; photoresist plasma stripping; porous SiCOH materials; Dielectric materials; Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Plasma measurements; Resists; Semiconductor materials; Strips; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345724

Filename

1345724