Title :
Channel-carrier mobility parameters for 4H SiC MOSFETs
Author :
Linewih, Handoko ; Dimitrijev, Sima
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Nathan, Qld., Australia
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this paper, mobility parameters for n-channel 4H SiC MOSFETs are extracted and implemented into 2D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral n-channel 4H SiC MOSFET´s with nitrided oxide-semiconductor interface, exhibiting normal mobility behavior. The effects of interface-trap density on the model parameters are discussed.
Keywords :
MOSFET; SPICE; carrier mobility; interface states; semiconductor device models; silicon compounds; wide band gap semiconductors; 2D device simulation; SPICE circuit simulator; SiC; channel carrier mobility; interface trap density; lateral n-channel 4H-SiC MOSFET; nitrided oxide-semiconductor interface; parameter extraction; Acoustic scattering; Analytical models; Capacitance; Circuit simulation; Fabrication; MOSFETs; Numerical simulation; SPICE; Silicon carbide; Voltage;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003290
