Title :
Studies on read-stability and write-ability of fast access STT-MRAMs
Author :
Ohsawa, Takashi ; Ikeda, Shoji ; Hanyu, Takahiro ; Ohno, Hideo ; Endoh, Tetsuo
Author_Institution :
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
Abstract :
It is shown that the 4T2MTJ and the 6T2MTJ-1 STT-MRAMs are more stable than SRAM at read operation in 90 nm, partly because the imbalanced resistances RAP and RP in a pair of MTJs increase the read-stability. However, the 6T2MTJ-2 STT-MRAM is not practical because of its destructive readout feature. For the worst cell (-5σ) in the tail distribution, the read-stability margin of the 4T2MTJ STT-MRAM is larger than the 6T2MTJ-1 one.
Keywords :
MRAM devices; circuit stability; magnetic tunnelling; magnetoelectronics; 4T2MTJ; 6T2MTJ-1 STT-MRAMs; SRAM; destructive readout feature; fast access STT-MRAMs; imbalanced resistances; read-stability margin; size 90 nm; tail distribution; write-ability; Circuit stability; Current measurement; Educational institutions; Monte Carlo methods; Stability analysis; Switches; Tin;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839665
