• DocumentCode
    161670
  • Title

    Studies on read-stability and write-ability of fast access STT-MRAMs

  • Author

    Ohsawa, Takashi ; Ikeda, Shoji ; Hanyu, Takahiro ; Ohno, Hideo ; Endoh, Tetsuo

  • Author_Institution
    Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
  • fYear
    2014
  • fDate
    28-30 April 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    It is shown that the 4T2MTJ and the 6T2MTJ-1 STT-MRAMs are more stable than SRAM at read operation in 90 nm, partly because the imbalanced resistances RAP and RP in a pair of MTJs increase the read-stability. However, the 6T2MTJ-2 STT-MRAM is not practical because of its destructive readout feature. For the worst cell (-5σ) in the tail distribution, the read-stability margin of the 4T2MTJ STT-MRAM is larger than the 6T2MTJ-1 one.
  • Keywords
    MRAM devices; circuit stability; magnetic tunnelling; magnetoelectronics; 4T2MTJ; 6T2MTJ-1 STT-MRAMs; SRAM; destructive readout feature; fast access STT-MRAMs; imbalanced resistances; read-stability margin; size 90 nm; tail distribution; write-ability; Circuit stability; Current measurement; Educational institutions; Monte Carlo methods; Stability analysis; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2014.6839665
  • Filename
    6839665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=161670