Title :
N-type doping of carbon nanotube transistors using yttrium oxide (Y2Ox)
Author :
Liyanage, L.S. ; Pitner, Gregory ; Xiaoqing Xu ; Wong, H.-S.
Author_Institution :
Dept. of Electr. Eng. & Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
Abstract :
We present a novel, VLSI compatible technique to fabricate n-type carbon nanotube (CNT) transistors using yttrium oxide as gate dielectric. Wafer-scale, aligned CNT transistors with yttrium oxide (Y2Ox) dielectrics exhibit n-type behavior with Ion/Ioff of 106 and subthreshold slope of 95 mV/dec. Controlled, slow evaporation of yttrium (Y) forms a smooth oxide surface that has excellent wetting to CNTs which consistently gives rise to strong n-type behavior in CNT transistors.
Keywords :
VLSI; carbon nanotube field effect transistors; dielectric materials; semiconductor doping; yttrium compounds; N-type doping; VLSI compatible technique; Y2Ox; carbon nanotube transistors; gate dielectric; n-type carbon CNT transistors; smooth oxide surface; wafer-scale; wetting; yttrium form evaporation; Aluminum oxide; CNTFETs; Dielectrics; Doping; Logic gates; Yttrium;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839667
