• DocumentCode
    161674
  • Title

    N-type doping of carbon nanotube transistors using yttrium oxide (Y2Ox)

  • Author

    Liyanage, L.S. ; Pitner, Gregory ; Xiaoqing Xu ; Wong, H.-S.

  • Author_Institution
    Dept. of Electr. Eng. & Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
  • fYear
    2014
  • fDate
    28-30 April 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present a novel, VLSI compatible technique to fabricate n-type carbon nanotube (CNT) transistors using yttrium oxide as gate dielectric. Wafer-scale, aligned CNT transistors with yttrium oxide (Y2Ox) dielectrics exhibit n-type behavior with Ion/Ioff of 106 and subthreshold slope of 95 mV/dec. Controlled, slow evaporation of yttrium (Y) forms a smooth oxide surface that has excellent wetting to CNTs which consistently gives rise to strong n-type behavior in CNT transistors.
  • Keywords
    VLSI; carbon nanotube field effect transistors; dielectric materials; semiconductor doping; yttrium compounds; N-type doping; VLSI compatible technique; Y2Ox; carbon nanotube transistors; gate dielectric; n-type carbon CNT transistors; smooth oxide surface; wafer-scale; wetting; yttrium form evaporation; Aluminum oxide; CNTFETs; Dielectrics; Doping; Logic gates; Yttrium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2014.6839667
  • Filename
    6839667
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=161674