• DocumentCode
    161676
  • Title

    Series resistance and mobility in mechanically-exfoliated layered transition metal dichalcogenide MOSFETs

  • Author

    Sachid, Angada B. ; Hui Fang ; Javey, Ali ; Chenming Hu

  • Author_Institution
    Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA
  • fYear
    2014
  • fDate
    28-30 April 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We show that transmission line method, where a set of devices are used, does not always correctly estimate series resistance of mechanically-exfoliated transition metal dichalcogenide MOSFETs. We calculate series resistance and carrier mobility from current-voltage characteristics of a single device. We show that series resistance should be considered for accurate mobility calculation even for long channel devices.
  • Keywords
    MOSFET; carrier mobility; molybdenum compounds; tungsten compounds; MoS2; WSe2; carrier mobility; current-voltage characteristics; long channel devices; mechanically-exfoliated layered transition metal dichalcogenide MOSFETs; series resistance; transmission line method; Doping; Logic gates; MOSFET; Materials; Metals; Power transmission lines; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2014.6839668
  • Filename
    6839668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=161676