DocumentCode :
161682
Title :
Designer Ge quantum dots Coulomb blockade thermometry
Author :
Chen, I.H. ; Wang, Cheng C. ; Li, Peter W.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2014
fDate :
28-30 April 2014
Firstpage :
1
Lastpage :
2
Abstract :
A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ~ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/kBT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.
Keywords :
elemental semiconductors; germanium; semiconductor quantum dots; single electron transistors; temperature measurement; CB theory; CB thermometer; Ge; SHT; full-width-at-half minimum; material parameter-independent equation; primary thermometric quantity; quantum dots Coulomb blockade thermometry; sharp differential conductance; single-hole transistor; temperature dependence; ultrasensitive CB primary thermometers; Diamonds; Equations; Temperature; Temperature dependence; Temperature measurement; Temperature sensors; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/VLSI-TSA.2014.6839670
Filename :
6839670
Link To Document :
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