An analytical model of short channel MOSFET including velocity overshoot

In this paper, an analytical model of short channel MOSFET including velocity overshoot is proposed. The model is developed based on the solution of energy balance equation under the assumption of displaced Maxwellian distribution. The resulting model is the augmented drift-diffusion velocity model. The parameters involved in the velocity model are physical parameters with only one fitting parameter. The model also includes the effects of the mobility degradation, drain induced barrier lowering effect, source drain series resistance and the channel length modulation. The theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions.