Title :
1D physically based non-quasi-static analog behavioral BJT model for SPICE
Author :
Jankovic, N. ; Pesic, T. ; Karamarkovic, J.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
fDate :
6/24/1905 12:00:00 AM
Abstract :
A compact 1D non-quasi-static BJT model (NQS BJT) based on the analog behavioral modeling capabilities of the SPICE simulator is described. The NQS BJT model parameters are derived directly from the physical device structure. A momentum relaxation time parameter is also included as equivalent inductivity, yielding more accurate prediction of unity gain frequency and phase characteristics. The efficiency of the novel NQS model is demonstrated by comparison with the standard Gummel-Poon model and experimental results.
Keywords :
SPICE; bipolar transistors; carrier relaxation time; circuit CAD; equivalent circuits; semiconductor device models; 1D NQS BJT model; BJT model parameters; BJT nonquasi-static analog SPICE model; Gummel-Poon model; SPICE simulator modeling capabilities; analog behavioral modeling; equivalent inductivity; momentum relaxation time parameter; phase characteristics; physical device structure based model; unity gain frequency; SPICE;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003299
