DocumentCode
1616874
Title
1D physically based non-quasi-static analog behavioral BJT model for SPICE
Author
Jankovic, N. ; Pesic, T. ; Karamarkovic, J.
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
2
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
463
Abstract
A compact 1D non-quasi-static BJT model (NQS BJT) based on the analog behavioral modeling capabilities of the SPICE simulator is described. The NQS BJT model parameters are derived directly from the physical device structure. A momentum relaxation time parameter is also included as equivalent inductivity, yielding more accurate prediction of unity gain frequency and phase characteristics. The efficiency of the novel NQS model is demonstrated by comparison with the standard Gummel-Poon model and experimental results.
Keywords
SPICE; bipolar transistors; carrier relaxation time; circuit CAD; equivalent circuits; semiconductor device models; 1D NQS BJT model; BJT model parameters; BJT nonquasi-static analog SPICE model; Gummel-Poon model; SPICE simulator modeling capabilities; analog behavioral modeling; equivalent inductivity; momentum relaxation time parameter; phase characteristics; physical device structure based model; unity gain frequency; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN
0-7803-7235-2
Type
conf
DOI
10.1109/MIEL.2002.1003299
Filename
1003299
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