Title :
Investigation of radiation hardness of HfO2 resistive random access memory
Author :
Bing-Yue Tsui ; Ko-Chin Chang ; Bor-Yuan Shew ; Heng-Yuan Lee ; Ming-Jinn Tsai
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Radiation hardness of HfO2-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray as radiation source. The low-resistance state (LRS) is immune to irradiation, but temporary change of the high-resistance state (HRS) and endurance degradation could be observed at high total irradiation dose (TID). A physical model is proposed to explain these observations. It is concluded that the HfO2-based RRAM can be operated in high radiation environment, and EUV can be use to fabricate high-density RRAM array.
Keywords :
X-ray effects; hafnium compounds; high-k dielectric thin films; integrated circuit modelling; radiation hardening (electronics); random-access storage; ultraviolet radiation effects; EUV irradiation; HRS; HfO2; LRS; TID; X-ray radiation source; endurance degradation; extreme ultraviolet irradiation; high radiation environment; high total irradiation dose; high-density RRAM array; high-resistance state; low-resistance state; physical model; radiation hardness; resistive random access memory; Dielectrics; Hafnium compounds; Light sources; Performance evaluation; Radiation effects; Resistance; Switches;
Conference_Titel :
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location :
Hsinchu
DOI :
10.1109/VLSI-TSA.2014.6839675
