Title :
A 3.5 GHz WiMAX power amplifier using Si-LDMOS
Author :
Rakluea, Paitoon ; Nakasuwan, Jintana
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Rajamangala Univ. of Technol. Thanyaburi, Thanyaburi
Abstract :
This paper describes the design a power amplifier for WiMAX applications at 3.5GHz using Si-LDMOS technology and is built on Epoxy-FR4 board with a dielectric constant of 4.5. To study the performance consisted of the design a linear Class A power amplifier which achieves the highest gain. Furthermore, all the simulations done in ADS simulator in order to optimize the design and to study performance. The design has shown an acceptable behaviour with a gain of 13.678 dB at 3.5 GHz. The achieved results given by the simulations have shown an excellent power performance which allows the use of that technology in the WiMAX systems.
Keywords :
CMOS integrated circuits; WiMax; circuit simulation; power amplifiers; 3.5 GHz WiMAX power amplifier; ADS simulator; CMOS; Epoxy-FR4 board; Si-LDMOS; WiMAX systems; frequency 3.5 GHz; gain 13.678 dB; linear class A power amplifier; CMOS technology; Design engineering; Dielectric constant; Gallium arsenide; Power amplifiers; Power engineering and energy; Power system modeling; Radio frequency; Safety; WiMAX; ADS simulator; Power Amplifier; Si-LDMOS;
Conference_Titel :
Control, Automation and Systems, 2008. ICCAS 2008. International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-89-950038-9-3
Electronic_ISBN :
978-89-93215-01-4
DOI :
10.1109/ICCAS.2008.4694478
