A 3.5 GHz WiMAX power amplifier using Si-LDMOS

Author

Rakluea, Paitoon ; Nakasuwan, Jintana

Author_Institution

Dept. of Electron. & Telecommun. Eng., Rajamangala Univ. of Technol. Thanyaburi, Thanyaburi

fYear

2008

Firstpage

1544

Lastpage

1547

Abstract

This paper describes the design a power amplifier for WiMAX applications at 3.5GHz using Si-LDMOS technology and is built on Epoxy-FR4 board with a dielectric constant of 4.5. To study the performance consisted of the design a linear Class A power amplifier which achieves the highest gain. Furthermore, all the simulations done in ADS simulator in order to optimize the design and to study performance. The design has shown an acceptable behaviour with a gain of 13.678 dB at 3.5 GHz. The achieved results given by the simulations have shown an excellent power performance which allows the use of that technology in the WiMAX systems.

Keywords

CMOS integrated circuits; WiMax; circuit simulation; power amplifiers; 3.5 GHz WiMAX power amplifier; ADS simulator; CMOS; Epoxy-FR4 board; Si-LDMOS; WiMAX systems; frequency 3.5 GHz; gain 13.678 dB; linear class A power amplifier; CMOS technology; Design engineering; Dielectric constant; Gallium arsenide; Power amplifiers; Power engineering and energy; Power system modeling; Radio frequency; Safety; WiMAX; ADS simulator; Power Amplifier; Si-LDMOS;

fLanguage

English

Publisher

ieee

Conference_Titel

Control, Automation and Systems, 2008. ICCAS 2008. International Conference on

Conference_Location

Seoul

Print_ISBN

978-89-950038-9-3

Electronic_ISBN

978-89-93215-01-4

Type

conf

DOI

10.1109/ICCAS.2008.4694478

Filename

4694478