• DocumentCode
    1616966
  • Title

    A simple theory to determine the attenuation amplitudes of quantum oscillations

  • Author

    Mao, Ling-feng ; Zhang, He-qiu ; Tan, Chang-Hua ; Xu, Ming-Zhen

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • Volume
    2
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    479
  • Abstract
    Tunneling currents through ultrathin SiO2 films have been observed to have small oscillatory components at high electric fields. In this article, a relation between the well known reflection coefficient and transmission coefficient of electron tunneling through a barrier and the amplitude of Fowler-Nordheim tunneling current oscillations is obtained based on the principle of quantum mechanics. A simple relation describing the factors affecting the amplitude of quantum oscillations is obtained based on the reflection coefficient and the transmission coefficient. It is found that the simple relation agrees well with the numerical results based on numerical calculations. A linear relation between the logarithmic attenuation of the oscillation amplitude and variable parameters such as barrier height, oxide thickness and the kinetic energy of incident electrons is observed. The results show that the oscillation amplitude attenuation can be accurately and simply described by this analytical solution.
  • Keywords
    high field effects; insulating thin films; oscillations; quantum interference phenomena; semiconductor-insulator boundaries; silicon compounds; tunnelling; Fowler-Nordheim tunneling current oscillations; SiO2; barrier electron tunneling; barrier height; electron tunneling reflection coefficient; electron tunneling transmission coefficient; high electric fields; incident electrons kinetic energy; oscillation amplitude logarithmic attenuation; oxide thickness; quantum mechanics; quantum oscillation attenuation amplitude determination; tunneling currents; ultrathin SiO2 films; Attenuation; Electrons; Helium; Interference; Kinetic energy; Quantum mechanics; Reflection; Tunneling; Voltage; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003302
  • Filename
    1003302