DocumentCode
1616966
Title
A simple theory to determine the attenuation amplitudes of quantum oscillations
Author
Mao, Ling-feng ; Zhang, He-qiu ; Tan, Chang-Hua ; Xu, Ming-Zhen
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
2
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
479
Abstract
Tunneling currents through ultrathin SiO2 films have been observed to have small oscillatory components at high electric fields. In this article, a relation between the well known reflection coefficient and transmission coefficient of electron tunneling through a barrier and the amplitude of Fowler-Nordheim tunneling current oscillations is obtained based on the principle of quantum mechanics. A simple relation describing the factors affecting the amplitude of quantum oscillations is obtained based on the reflection coefficient and the transmission coefficient. It is found that the simple relation agrees well with the numerical results based on numerical calculations. A linear relation between the logarithmic attenuation of the oscillation amplitude and variable parameters such as barrier height, oxide thickness and the kinetic energy of incident electrons is observed. The results show that the oscillation amplitude attenuation can be accurately and simply described by this analytical solution.
Keywords
high field effects; insulating thin films; oscillations; quantum interference phenomena; semiconductor-insulator boundaries; silicon compounds; tunnelling; Fowler-Nordheim tunneling current oscillations; SiO2; barrier electron tunneling; barrier height; electron tunneling reflection coefficient; electron tunneling transmission coefficient; high electric fields; incident electrons kinetic energy; oscillation amplitude logarithmic attenuation; oxide thickness; quantum mechanics; quantum oscillation attenuation amplitude determination; tunneling currents; ultrathin SiO2 films; Attenuation; Electrons; Helium; Interference; Kinetic energy; Quantum mechanics; Reflection; Tunneling; Voltage; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN
0-7803-7235-2
Type
conf
DOI
10.1109/MIEL.2002.1003302
Filename
1003302
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