Title :
Dielectric breakdown of SiO2 thin films deposited by ion beam induced and plasma enhanced CVD
Author :
Barranco, A. ; Jiménez, A. ; Frutos, F. ; Cotrino, J. ; Yubero, F. ; Espinós, J.P. ; González-Elipe, A.R.
Author_Institution :
Instituto de Ciencia de Materiales, Seville Univ., Spain
fDate :
6/23/1905 12:00:00 AM
Abstract :
This paper presents a comparative study of SiO2 thin films prepared at room temperature by ion beam induced chemical vapor deposition (IBICVD) and plasma enhanced chemical vapor deposition (PECVD) methods. The films are characterized by AFM, TEM, RBS, ERDA, NRA, X-ray reflectometry and spectroscopic ellipsometry. While the films prepared by IBICVD are very compact and dense and have a high refractive index, those prepared by PECVD exhibit a lower refractive index value, lower density and have a higher surface roughness. Films prepared by IBICVD present a breakdown electric field value (49.14 MV/cm), four times higher than that of the films prepared by PECVD (12.11 MV/cm) and other SiO2 materials reported in the literature. This higher value is a consequence of the low roughness and high density of the IBICVD films. This type of microstructure is produced by the effect of the highly energetic ion beams (e.g. 400 eV) impinging on the surface of the growing films during their preparation
Keywords :
CVD coatings; Rutherford backscattering; X-ray reflection; atomic force microscopy; electric breakdown; ellipsometry; insulating thin films; ion beam applications; plasma CVD coatings; refractive index; rough surfaces; silicon compounds; transmission electron microscopy; 300 K; 400 eV; AFM; ERDA; IBICVD; NRA; PECVD; RBS; SiO2; SiO2 thin films; TEM; X-ray reflectometry; density; dielectric breakdown; highly energetic ion beams; ion beam induced chemical vapor deposition; microstructure; plasma enhanced CVD; preparation; refractive index; room temperature; spectroscopic ellipsometry; surface roughness; Chemical vapor deposition; Dielectric breakdown; Dielectric thin films; Ion beams; Optical films; Plasma temperature; Refractive index; Rough surfaces; Sputtering; Surface roughness;
Conference_Titel :
Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
Conference_Location :
Eindhoven
Print_ISBN :
0-7803-6352-3
DOI :
10.1109/ICSD.2001.955633
