• DocumentCode
    1617017
  • Title

    Behavior of the discrete states observed through detailed analyses of TSC curves

  • Author

    Maeta, Shigeyoshi ; Kamitani, Yoshimi ; Nukuto, Teruhiko ; Takata, Masamitsu ; Yoshiura, Masahiko

  • Author_Institution
    Osaka Inst. of Technol., Japan
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    In order to make the electronic transport mechanism in organic substances clear in detail, the thermally stimulated current (TSC) method is very effective. From the TSC method, three parameters such as an energy depth Et [eV] of the carrier trap site, a preexponential parameter (or an escape frequency factor) ν [s-1 ] and a charge carrier density nt [m-3] relating to the phenomena, can be estimated. We have completed some theories that enable us to analyze in detail TSC data obtained experimentally. One of them, the asymptotic estimation method (AEM) originally proposed by us, enables us to evaluate these three parameters accurately. And this has been expanded extensively to estimate 3N parameters, through an exact auto-separation (AS) method of various composite TSC curves and through the reconstruction (RC) method of TSC curves with no peak obtained by partially repeated heating cooling procedures. Where N is the number of the single TSC curve of the first-order included in the objects. The fine advantages are that these expanded theories have higher accuracy than 4 significant figures. Then, detail analyses of discrete states became possible by using both methods
  • Keywords
    curve fitting; electron traps; organic compounds; thermally stimulated currents; TSC curves; anthracene single crystal; asymptotic estimation method; carrier trap site; charge carrier density; composite curves; discrete states; electronic transport mechanism; energy depth; escape frequency factor; exact auto-separation method; organic substances; preexponential parameter; thermally stimulated current; Charge carrier density; Charge carriers; Cooling; Electron traps; Equations; Frequency estimation; Heating; Iron; Laser excitation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
  • Conference_Location
    Eindhoven
  • Print_ISBN
    0-7803-6352-3
  • Type

    conf

  • DOI
    10.1109/ICSD.2001.955634
  • Filename
    955634