DocumentCode
1617023
Title
A modified DSOI (Drain/Source On Insulator) device structure with better electrical performance
Author
Bo, Jiang ; Ping, He ; Lilin, Tian ; Xi, Lin
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Volume
2
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
487
Lastpage
490
Abstract
A new device structure called DSOI (Drain/Source On Insulator) is proposed to alleviate the thermal transfer problem and floating body effects in SOI (Silicon on Insulator) device. The purpose of present work is to modify DSOI structure to get the best device electrical capability. We focus on the location of buried oxidation. And simulation results approve that this modified structure having better electrical performance than prototype
Keywords
MOSFET; buried layers; oxidation; silicon-on-insulator; DSOI device; MOSFET; buried oxidation; electrical characteristics; floating body effect; thermal transfer; Circuit simulation; Dielectrics and electrical insulation; Equations; Helium; Ion implantation; Medical simulation; Oxidation; Silicon on insulator technology; Threshold voltage; Virtual prototyping;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-7235-2
Type
conf
DOI
10.1109/MIEL.2002.1003304
Filename
1003304
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