Challenges of clean/strip processing for Cu/low-k technology

Author

Baklanov, M.R. ; Le, Q.T. ; Kesters, E. ; Iacopi, F. ; Van Aelst, J. ; Struyf, H. ; Boullart, W. ; Vanhaelemeersch, S. ; Maex, K.

Author_Institution

IMEC, Leuven, Belgium

fYear

2004

Firstpage

187

Lastpage

189

Abstract

This presentation is an overview of clean/strip processing for low Cu/low-k technology. The paper starts with a brief analysis of dry etch processes that determine the issues in subsequent processes; in the case of porous low-k dielectrics, etch conditions must be carefully optimized to find an optimal balance between the polymer formation and plasma damage of low-k dielectrics. The presentation includes recent results related to dry and wet cleaning, plasma damage, and stability of low-k films. The wet cleaning of solutions using supercritical CO₂(SCCO₂)IPA/water mixtures and special surfactants will also be analyzed. Results obtained by different advanced techniques like FTIR, XPS, ellipsometric porosimetry (EP), energy filtered TEM (EFTEM), TOF SIMS etc have been used to characterize the residues, plasma damage and cleaning efficiency and they will be analyzed during the presentation.

Keywords

X-ray photoelectron spectra; dielectric thin films; ellipsometers; etching; secondary ion mass spectra; surface cleaning; transmission electron microscopy; CO₂(SCCO₂); Cu; Cu/low-k technology; FTIR; IPA; TOF SIMS; XPS; clean processing; cleaning efficiency; dry cleaning; dry etch processes; ellipsometric porosimetry; energy filtered TEM; films stability; plasma damage; polymer formation; porous low-k dielectrics; residues characterization; strip processing; surfactants; water mixtures; wet cleaning; Cleaning; Dry etching; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma stability; Polymer films; Resists; Sputter etching; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345739

Filename

1345739