Analytical solutions for breakdown voltage and electrical characteristics of STI DEMOS transistors

Author

Tsai, H.C. ; Yadav, Y. ; Liou, R.H. ; Wu, K.-M. ; Lin, Y.C. ; Lien, C.H.

Author_Institution

Dept. Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

A CMOS compatible high-voltage STI DEMOS transistor is fabricated and its electrical characteristics studied. A method is used to find the breakdown voltage of this two-dimensional STI DEMOS structure theoretically. A breakdown voltage model, which relates the breakdown voltage to the effective N well doping concentration N_B and the width of the accumulation region χ_a, is derived. The predictions of this model agree very well with both the experimental data and with the TCAD simulations.

Keywords

CMOS integrated circuits; MOSFET; semiconductor device breakdown; semiconductor device models; semiconductor doping; CMOS compatible high-voltage STI DEMOS transistor; TCAD simulations; accumulation region; breakdown voltage model; effective N well doping concentration; electrical characteristics; two-dimensional STI DEMOS structure; Breakdown voltage; Doping; Electric breakdown; JFETs; Niobium; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839682

Filename

6839682