DocumentCode
1617094
Title
Ultra low-k integration solutions using GCIB processing
Author
White, Brian ; Book, Greg ; Hautala, John ; Tabat, Martin
fYear
2004
Firstpage
193
Lastpage
195
Abstract
Integration of porous low-k materials for interconnect technology at the 45nm node presents many challenges to etch, ash and cleans processes. Dry processing with a gas cluster ion beam (GCIB) employs a highly energetic beam of loosely bound atomic or molecular clusters. We will show the ability of GCIB to pore seal, etch and ash p-MSQ features, while minimizing low-k film damage as compared to traditional plasma processes.
Keywords
dielectric thin films; integrated circuit interconnections; ion beam assisted deposition; porous materials; surface treatment; 45 nm; GCIB processing; ash processes; atomic clusters; cleans processes; etch processes; gas cluster ion beam; interconnect technology; low-k film damage; molecular clusters; plasma processes; pore seal; porous low-k materials; ultra low-k integration solutions; Argon; Ash; Atomic beams; Dielectric materials; Etching; Particle beam injection; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN
0-7803-8308-7
Type
conf
DOI
10.1109/IITC.2004.1345741
Filename
1345741
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