Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]

Author

García, R. ; Estrada, M. ; Cerdeira, A. ; Reséndiz, L.

Author_Institution

Sect. of Solid State Electron., CINVESTAV-IPN, Mexico City, Mexico

Volume

2

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

509

Lastpage

512

Abstract

Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods

Keywords

X-ray diffraction; amorphous semiconductors; atomic force microscopy; crystallisation; elemental semiconductors; plasma materials processing; semiconductor thin films; silicon; surface texture; thin film transistors; PECVD equipment; Si; X-ray diffractometry; annealing temperature; atomic force microscopy; crystallization time; hydrogen dilution; low temperature polysilicon layers; plasma enhanced crystallization; polycrystalline films; process temperature; resistivity; surface texture; Annealing; Atomic force microscopy; Conductivity; Crystallization; Hydrogen; Plasma properties; Plasma temperature; Plasma x-ray sources; Surface texture; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003308

Filename

1003308