• DocumentCode
    1617167
  • Title

    A new working principle of ferroelectric gate FET memory with an additional electrode

  • Author

    Khoa, Tran Dang ; Horita, Susumu

  • Author_Institution
    Sch. of Mater. Sci., Japan Adv. Inst. of Sci. & Technol. (JAIST), Ishikawa, Japan
  • Volume
    2
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    513
  • Lastpage
    516
  • Abstract
    Reported a new operating principle of ferroelectric gate FET memory. With an intermediate electrode inserted between a ferroelectric capacitor and a MIS-FET, the memory has potential to solve problems of short retention time, high operation voltage and instability performance of conventional ferroelectric gate FET memory. The memory was experimentally and theoretically investigated and was verified to be practicable
  • Keywords
    MISFET; circuit stability; electrodes; ferroelectric capacitors; ferroelectric storage; MISFET; ferroelectric capacitor; ferroelectric gate FET memory; instability performance; intermediate electrode; operation voltage; retention time; Capacitors; Electrodes; FETs; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003309
  • Filename
    1003309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1617167