Title :
A new working principle of ferroelectric gate FET memory with an additional electrode
Author :
Khoa, Tran Dang ; Horita, Susumu
Author_Institution :
Sch. of Mater. Sci., Japan Adv. Inst. of Sci. & Technol. (JAIST), Ishikawa, Japan
fDate :
6/24/1905 12:00:00 AM
Abstract :
Reported a new operating principle of ferroelectric gate FET memory. With an intermediate electrode inserted between a ferroelectric capacitor and a MIS-FET, the memory has potential to solve problems of short retention time, high operation voltage and instability performance of conventional ferroelectric gate FET memory. The memory was experimentally and theoretically investigated and was verified to be practicable
Keywords :
MISFET; circuit stability; electrodes; ferroelectric capacitors; ferroelectric storage; MISFET; ferroelectric capacitor; ferroelectric gate FET memory; instability performance; intermediate electrode; operation voltage; retention time; Capacitors; Electrodes; FETs; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Random access memory; Voltage; Writing;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003309
